2011

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book  ;  ;  ;  ;  ;
Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors
Pennington, NJ : Electrochemical Society (ECS), ECS transactions 35, 297 - 304 () BibTeX | EndNote: XML, Text | RIS

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Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique
Pennington, NJ : Electrochemical Society (ECS), ECS transactions 35, 531 - 543 () BibTeX | EndNote: XML, Text | RIS

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Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
Pennington, NJ : Electrochemical Society (ECS), ECS transactions 35, 461 - 479 () BibTeX | EndNote: XML, Text | RIS

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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
Zug : Scitec Publ., Advanced materials research 276, 87 - 93 () [10.4028/www.scientific.net/AMR.276.87] BibTeX | EndNote: XML, Text | RIS

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Cathodoluminescence spectroscopy on selectively grown GaN nanowires
: [Proceedings] - , 2011. - ISBN - doi:10.1117/12.878836
SPIE OPTO, San FranciscoSan Francisco, California, 22 Jan 2011 - 27 Jan 20112011-01-222011-01-27
000 pp. () [10.1117/12.878836]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Selektives Wachstum von InN Nanostrukturen
26. DGKK Workshop "Epitaxie von III/V Halbleitern
Seminar, StuttgartStuttgart, 8 Dec 20112011-12-08
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Selective Area MOVPE and optical properties of III-nitride nanostructures
ICNS-9 2011
Seminar, Glasgow, SchottlandGlasgow, Schottland, 10 Jul 20112011-07-10
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Selective Area MOVPE and optical properties of III-nitride nanostructures
EWMOVPE 2011
Seminar, Breslau, PolenBreslau, Polen, 5 Jun 20112011-06-05
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Impact of growth conditions on morphology, structure and electrical properties of MOVPE grown InAs nanowires
DPG Frühjahrstagung 2011
Seminar, DresdenDresden, 14 Mar 20112011-03-14
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Self assembled GaN nanostructures by dry etching and their optical characteristics
ICNS-9
Seminar, GlasgowGlasgow, 10 Jul 20112011-07-10
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III/N nanostructures via top down & bottom up approaches
Future Trends in Nanoelectronics - Russiam German Workshop
Seminar, FZJFZJ, 14 Jun 20112011-06-14
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MOVPE von GaN zur Herstellung von Nanostrukturen durch reaktives Ionenätzen
DGKK
Seminar, StuttgartStuttgart, 8 Dec 20112011-12-08
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Single-mode Quantum Cascade Lasers Employing a Candy-cane Shaped Fabry-Perot Cavity
DPG Frühjahrstagung 2011
Seminar, DresdenDresden, 13 Mar 20112011-03-13
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Comparison of InAs nanowire conductivity: influence of growth method and structure
ISCS 2011
Seminar, BerlinBerlin, 22 May 20112011-05-22
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non conference)
MOVPE growth and characterization of III-V nanowires for spintronic and electronic applications
German-Russian Workshop on Future Trends in Nanoelectronics 2011
Seminar, FZJFZJ, 14 Jun 20112011-06-14
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MOVPE von schräg stehenden <111> InAs Nanodrähten auf GaAs und ihre Charakterisierung
DGKK Workshop 2011
Seminar, Meeting location, 8 Dec 20112011-12-08
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Comparison of InAs nanowire conductivity: influence of growth method and structure
BibTeX | EndNote: XML, Text | RIS

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Selective-Area MOVPE von GaAs/InAs - Core/Shell Nanodrähten
DGKK Workshop
Seminar, StuttgartStuttgart, 8 Dec 20112011-12-08
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GaAs/InAs - Core/shel nanowires grown by SA-MOVPE
JARA-FIT Science Days
Seminar, SchleidenSchleiden, 28 Oct 20112011-10-28
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Approaches to affect InAs nanowire structure in SA-MOVPE
EW MOVPE 2011
Seminar, BreslauBreslau, 5 Jun 20112011-06-05
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GaAs/InAs - core/shell nanowires grown by SA-MOVPE
EW MOVPE 2011
Seminar, BreslauBreslau, 5 Jun 20112011-06-05
BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;
Approaches to affect InAs nanowire structure in SA-MOVPE
Extended Abstracts of 14th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE)05.-08.06.2011. - 978-83-7493-599-9. - S. 257 BibTeX | EndNote: XML, Text | RIS

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Uniform GaAs/InAs - core/shell nanowire arrays grown by selective-area MOVPE
Extended Abstracts of 14th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE)05.-08.06.2011. - 978-83-7493-599-9. - S. 253 - 256 BibTeX | EndNote: XML, Text | RIS

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Catalyst-free selective area MOVPE and optical properties of III-nitride nanostructures
Extended Abstracts of 14th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE)05.-08.06.2011. - 978-83-7493-599-9. - S. 291 - 294 BibTeX | EndNote: XML, Text | RIS

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Optimised marker definition for high overlay accuracy e-beam lithography
37th international Conference on Micro- and Nanoengineering MNE 2011
Seminar, BerlinBerlin, 19 Sep 20112011-09-19
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SiGe-quantum dot arrays for Single Photon Detection
DPG-Frühjahrstagung
Seminar, DresdenDresden, 13 Mar 20112011-03-13
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;
SiGe-quantum dot arrays for Single Photon Detection
DPG-Frühjahrstagung, 13.-18.03.2011, Dresden, Deutschland BibTeX | EndNote: XML, Text | RIS

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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
The European Solid-State Device Research Conference (ESSDERC)
Seminar, HelsinkiHelsinki, 12 Sep 20112011-09-12
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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC). - 2011 . - S. 251 - 253 BibTeX | EndNote: XML, Text | RIS

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20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain
12 International Conference on Ultimate Integration on Silicon (ULIS)
Seminar, Cork, IrelandCork, Ireland, 14 Mar 20112011-03-14
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
12 International Conference on Ultimate Integration on Silicon (ULIS)
Seminar, Cork, IrelandCork, Ireland, 14 Mar 20112011-03-14
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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
12 International Conference on Ultimate Integration on Silicon (ULIS)
Seminar, Cork, IrelandCork, Ireland, 14 Mar 20112011-03-14
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NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires
Joint 2011 Inter. Interconnect Technology and materials for Advanced Metallization Conference
Seminar, DresdenDresden, 9 May 20112011-05-09
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Planar and Nanowire Si-TFETs
China Semiconductor Technology International Conference (CSTIC)
Seminar, Shanghai, ChinaShanghai, China, 13 Mar 20112011-03-13
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20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain
Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS). - 2011. - S. 38 - 41 BibTeX | EndNote: XML, Text | RIS

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Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation
Proceedings. Joint 2011 International Interconnect Technology and materials for Advanced Metallization Conference, 2011 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;  ;
NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires
Proceedings.Joint 2011 International Interconnect Technology and materials for Advanced Metallization Conference, 2011 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;
Analysis of n-type Schottky-Barrier MOSFETs
2010 IEEE International SOI Conference, Book Series: IEEE International SOI Conference BibTeX | EndNote: XML, Text | RIS

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Concepts for energy efficient transistors
7.Chemnitzer Seminar für Nanotechnology, Nanomaterials und Nanoreliability
Seminar, Fraunhofer ENAS, ChemnitzFraunhofer ENAS, Chemnitz, 24 May 20112011-05-24
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
IEEE Proceeding of 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 March 2011. - S. 167 - 170 BibTeX | EndNote: XML, Text | RIS

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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
IEEE Proceeding of 12th International Conference on Ultimate Integration on Silicon (ULIS), 14-16 March 2011. - S. 202 - 205 BibTeX | EndNote: XML, Text | RIS

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Magnetic order in TbMnO3-LaCoO3 superlattices
471. Wilhelm and Else Heraeus Seminar: "Functional Magnetoelectric Oxide Heterostructures - Dreikönigstreffen
Seminar, Physikzentrum Bad HonnefPhysikzentrum Bad Honnef, 5 Jan 20112011-01-05
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Letzte Änderung: 20.05.2022