SHADOW WALL EPITAXY: Growth of tomorrow

Advancing the Compound Semiconductor Technology with the Robust Shadow Wall Technique:

INVEST IN THE FUTURE OF COMPOUND SEMICONDUCTORS!

INNOVATION

  • Integration of compound semiconductors with the leading edge CMOS technology.
  • Ability to tailor composition & doping profiles with an atomic distance precision.
  • Etch-free implementation of hybrid devices.
  • Complete in-situ process flow.
SHADOW WALL EPITAXIE: Growth of tomorrow
Current typical semiconductor materials used with the Shadow Wall Technique. A wide variety of semiconductors and metals can be processed.
Copyright:
— Forschungszentrum Jülich

YOUR ADVANTAGES

  • Superior performance and high-quality compound semiconductor devices.
  • Scalable technology with further integration prospects.
  • Rapid prototyping assistance of next generation technology products.
  • Drastic reduction of fabrication efforts and costs.

CORE TECHNOLOGY

Constant innovation in chip manufacturing technology pushes the physical limitations and technological bottlenecks. Integration of new materials into semiconductor technology promises a major revolutionary impact on various applications.

Section of the Nanocluster of Forschungszentrum Jülich: A unique combination of 11 UHV epitaxial/deposition systems including MBE, ALD and sputtering tools for all in-situ processing.
Copyright:
— Forschungszentrum Jülich

Our innovative Shadow Wall Technique for molecular beam epitaxy (MBE), allows us to grow various platforms of semiconductors with superior crystal quality.

These prefabricated Shadow Walls confine the molecular beams to locally defined explicit device regions.

In combination with the deposition of metals and oxides, this technology allows the realization of various fully in-situ processed devices with low-resistance ohmic contacts as well as gate terminals.

SHADOW WALL TECHNIQUE

Our Shadow Wall Technique is a selective orientation-dependent molecular-beam epitaxial growth concept. This enables for the all-in-situ fabrication of fully independent complete products such as field-effect transistors (FETs), light-emitters and detectors.

SHADOW WALL EPITAXIE: Growth of tomorrow
Copyright:
— Forschungszentrum Jülich

ABOUT US

We are a team of dedicated researchers and material specialists at Forschungszentrum Jülich GmbH with the strong expertise in the epitaxial growth of compound semiconductors and nanofabrication.

PD Dr. Alexander Pawlis

Leitung der Arbeitsgruppe Halbleiterepitaxie und Quantenoptik (PGI-9) Wissenschaftliche Leitung des Nanoclusters (PGI-10)

  • Peter Grünberg Institute (PGI)
  • JARA Institute Energy-efficient information technology (PGI-10)
Building 02.6 /
Room 4024
+49 2461/61-2077
E-Mail

Dr. Yurii Kutovyi

  • Peter Grünberg Institute (PGI)
  • Semiconductor Nanoelectronics (PGI-9)
Building 02.6 /
Room 4022
+49 2461/61-5613
E-Mail

Dr. Nils von den Driesch

  • Peter Grünberg Institute (PGI)
  • JARA Institute Energy-efficient information technology (PGI-10)
Building 02.6 /
Room 4022
+49 2461/61-85647
E-Mail

Last Modified: 19.04.2024